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Creators/Authors contains: "Sharma, Manish"

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  1. ; ; ; (, IEEE Access)
    Free, publicly-accessible full text available January 1, 2026
  2. ; ; ; ; ; ; ; ; ; ; et al (, Physical Review Materials)
    Free, publicly-accessible full text available March 1, 2026
  3. ; ; (, 2021 IEEE International Geoscience and Remote Sensing Symposium IGARSS)
    null (Ed.)
    Full Text Available 
  4. ; ; ; ; (, IEEE/CVF International Conference on Computer Vision Workshops (ICCVW))
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  5. ; ; ; ; ; ; (, IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing)
    null (Ed.)
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  6. ; ; ; ; ; (, Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV)
    We report on the site-selective growth of >90% vertical GaAs nanowires (NWs) on Si (111) using self-assisted molecular beam epitaxy. The influences of growth parameters (pre-growth Ga opening time, V/III flux ratio) and processing conditions (reactive ion etching (RIE) and HF etching time) are investigated for different pitch lengths (200-1000 nm) to achieve vertical NWs. The processing variables determine the removal of the native oxide layer and the contact angle of Ga-droplet inside the patterned hole that are critical to the vertical orientation of the NWs. Pre-growth Ga-opening time is found to be a crucial factor determining the size of the droplet in the patterned hole, while the V/III beam equivalent pressure (BEP) ratio influenced the occupancy of the holes due to the axial growth of NWs being group-V limited. 
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  7. ; ; ; ; (, Crystal Growth & Design)
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